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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6650/3 10 AMP / 80 Volts 50 MHz PNP POWER DARLINGTON BIPOLAR TRANSISTOR Features: * * * * Low Saturation Voltage Hermetically Sealed, Isolated Package Direct Replacement for 2N6650 TX, TXV, S-Level Screening Available, Equivalent to MIL-PRF-19500/527 DESIGNER'S DATA SHEET TO-3 Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Continuous Collector Current Maximum Base Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-3 .450 .250 .135 MAX O.875 MAX Symbol VCEO VCBO VEBO IC IB @ TA = 25C @ TC = 25C Value 80 80 5 10 0.25 5 85 -65 to +175 1.76 Units Volts Volts Volts Amps Amps W C C/W P D1 P D2 Top & Tstg RJC 2x .312 MIN 2x .043 .038 SEATING PLANE 1 2x O.165 .151 .525 MAX .675 .655 2x R.188 MAX 2 .440 .420 NOTES: 2x .225 .205 1 1 THIS DIMENSION SHALL BE MEASURED AT POINTS .050 - .055" BELOW THE SEATING PLANE. WHEN GAGE IS NOT USED, MEASUREMENT WILL BE MADE AT SEATING PLANE. THIS OUTLINE DOES NOT MEET THE MINIMUM CRITERIA ESTABLISHED BY JS-10 FOR REGISTRATION. 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0089A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6650/3 Symbol IC = 200mA IC = 200 mA; RBB= 100 VCB = 80 V VCE = 80 V VCE = 80 V, VBE= 1.5 V VEB = 5.0 V VCE = 3V, IC = 1 A VCE = 3V, IC = 5 A VCE = 3V, IC = 10 A BVCEO BVCER ICBO ICEO ICEX IEBO HFE1 HFE2 HFE3 Electrical Characteristics 4/ Collector to Emitter Sustaining Voltage Collector - Emitter Breakdown Voltage Collector Base Cutoff Current Collector Emitter Cutoff Current Collector Emitter Cutoff Current Emitter Base Cutoff Current DC Forward Current Transfer Ratio * Min 80 80 -- -- -- -- 300 1000 100 -- -- -- -- 50 -- -- Typ -- -- -- 0.001 -- 0.001 Max Units -- -- 1.0 1.0 0.3 10 V Volts mA mA mA mA 7,000 -- 9,000 20,000 1500 -- 1.4 2.2 2.0 2.8 350 100 0.5 2.0 2.0 3.0 2.8 4.5 400 300 2.5 10 pF s V Collector to Emitter Saturation Voltage IC = 5 A, IB = 10 mA VCE(sat)1 IC = 10 A, IB = 100 mA VCE(sat)2 Base to Emitter Voltage Frequency Transition (Small Signal Current Gain) @ f= 1 MHz Output Capacitance Switching characteristics Safe Operating Area TC= 25C, 1 cycle, 1 sec IC = 5 A, VCE = 3V IC = 10 A, VCE = 3V VCE=5V, IC = 1 A, f= 1 MHz VCB = 10V, f = 1MHz VCC = 30V, IC = 5 A, IB1 =IB2 = 20 mA VCE = 8.5V, IC = 10 A VCE = 25V, IC = 3.4 A VCE = 80V, IC = 0.14 A VBE(on)1 VBE(on)2 hfe Cobo ton toff SOA1 SOA2 SOA3 V NOTES: * Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory Package TO-3 PIN ASSIGNMENT Collector Emitter Case Pin 2 Base Pin 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0089A DOC |
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